演讲嘉宾-Vladimir Falko

Vladimir Falko
石墨烯旗舰计划基础研究项目组负责人、英国国家石墨烯研究院主任
  Vladimir Falko教授是英国凝聚态物理理论领域的领军人物之一,他在石墨烯的电学和光学特性方面做出了大量卓越的贡献,其中包括双层石墨烯的发现。在他从业的前20年中,一直在兰卡斯特大学任教,并任命为特聘教授。2015年,他担任英国曼彻斯特大学国家石墨烯研究院主任,成为站在石墨烯行业金字塔顶端的人之一。同时他还担任石墨烯旗舰计划基础研究项目组负责人、英国曼彻斯特大学石墨烯NOWNANO博士训练中心主任。
  Falko教授在塑造欧洲石墨烯及其他二维材料研究群体中发挥着至关重要的作用,此外,他还组织建立了石墨烯周系列会议,领导欧洲石墨烯旗舰计划工作等,包括石墨烯及其他二维材料的基础科学研究。Falko教授的研究领域主要包括石墨烯及相关二维原子的原子晶体,电子运输及光电性能,二维原子材料的异质结构(石墨烯-六方氮化硼等),强关联二维材料的量子霍尔效应,半导体量子点的量子光学及光学特性等的研究。2017年9月,在由中国石墨烯产业技术创新战略联盟主办的2017中国国际石墨烯创新大会上,Vladimir Falko教授受聘为联盟高级顾问。
  鉴于Vladimir Falko教授在石墨烯基础研究与应用方面所做出的杰出贡献,2018中国国际石墨烯创新大会组委会特邀请他做主题报告,与大家分享英国曼彻斯特大学国家石墨烯研究院近期的科研成果。Falko教授也希望借助大会的平台,能够与更多的国内外企业和机构展开积极的交流与合作,推动石墨烯一带一路合作,为中国乃至全球的石墨烯产业发展贡献力量。

演讲题目:Infrared and THz optics of atomically thin films of transition-metal dichalcogenides and post-transition metal chalcogenides
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内容摘要

Transition-metal dichalcogenides (TMD), MoS2, MoSe2, WS2 and WSe2 and post-transition metal chalcogenides (PTMC), InSe and GaSe are materials where a strong covalent bonding of atoms inside individual layers coexists with a weak van der Waals coupling of the consecutive layer of the bulk crystal. Such peculiar bonding makes it possible to isolate mechanically, or to grow epitaxially atomically thin films of such compounds with a precise number of atomic layers. At the same time, van der Waals nature of these crystals coexists with strong hybridizations of – separately – conduction and valence band orbitals in the consecutive monolayers in the film, making the band structure of few-layer atomically thin TMDs and PTMCs sensitive to the number of layers in them. In particular, few-layer films acquire multiple subbands in their electronic spectra, with a strong coupling of inter-subband transitions of carriers (electrons in n-doped and holes in p-doped materials) with out-of-plane polarised photons. Here, we show that, when n- or p-doped, few-layer films of TMDs and PTMCs become absorbers and emitters of infrared (IR) and THz light. Our density functional theory modelling and a specially designed hybrid k·p theory for the monolayers of these materials, combined with the tight-binding model description of the interlayer hopping (HkpTB), predicts that optical activity of few-layer films of these two classes of compounds densely covers the range from IR (1.5 micron) for bilayer films to THz for the films with 3-10 layers. In a way, these thin films are analogous to quantum wells in conventional semiconductors, and, by choosing the number of layers, and/or n- or p-doping in one of TMD and PTMC compounds, one can tune such inter-subband transition energy to the desirable application range, offering a new way how 2D materials can be harnessed for developing new technologies. 

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