演讲嘉宾-Jongill Hong

Jongill Hong
Yonsei University
After completed his M.S. and Ph.D. degrees in Materials Science and Engineering at Stanford University in U.S.A. in 1999, Professor Jongill Hong worked at Fujitsu Limited in Japan to research and develop a GMR-based spintronic (magnetoelectronic) sensor for HDD applications. He took part in setting the world record in magnetic recording density over 100 Giga-bit/inch2 in 2001 at Fujitsu Limited.
Since 2002, Prof. Hong has served as a faculty member in the department of Materials Science and Engineering at Yonsei University in Seoul, Korea. His primary interest is with novel magnetic materials and devices. His current research thrust is to realize new spintronic devices composed of nano-sized magnetic ultra-thin film systems, such as magnetic superlattices, magnetic tunnel junctions and ferromagnetic graphene. Spin detection and manipulation in ultra-thin magnetic/non-magnetic multilayers and spin transistors are another main thrust in his group. Ferromagnetic graphene and spin circuits on graphene have also been intensively exploring in his group.
Professor Hong has published more than 50 peer-reviewed research articles as the first or the corresponding author in prestigious journals including Nature Nanotechnology, Nature Communications, ACS Nano and ACS Applied Materials and Interfaces. He received the Prime Minister’s Commendation for the excellency of research funded by Korean Government. Information on Prof. Hong and his research field can be found at his website at spintronic.yonsei.ac.kr.
演讲题目:Intrinsic monolayer-graphene semiconductor gapped by hydrogenation and its field effect transistor
主题会场石墨烯战略前沿技术论坛
开始时间
结束时间
内容摘要

The absence of a sizeable band gap in graphene synthesized by present technologies and experimental challenges originating from the intrinsic nature and extrinsic degradation of graphene have been impeding further developments in envisioned carbon-based electronics. Here, we first demonstrate an intrinsic monolayer-graphene semiconductor hydrogenated by remote plasma and its field-effect transistor showing an on/off current ratio over 103 at room temperature. We show that a band gap can be tuned as wide as 3.8 eV by varying hydrogen coverage. Furthermore, the gap modulation is reversible owing to the non-destructive nature of our method of hydrogenation, which preserves the structural integrity of the original graphene. Our new band-gap engineering protocol for hydrogenated graphene will play a critical role in realizing a broad range of novel applications encompassing integrated carbon electronics, optoelectronics, and photonics.

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凯发_Jongill Hong

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演讲嘉宾-Jongill Hong

Jongill Hong
Yonsei University
After completed his M.S. and Ph.D. degrees in Materials Science and Engineering at Stanford University in U.S.A. in 1999, Professor Jongill Hong worked at Fujitsu Limited in Japan to research and develop a GMR-based spintronic (magnetoelectronic) sensor for HDD applications. He took part in setting the world record in magnetic recording density over 100 Giga-bit/inch2 in 2001 at Fujitsu Limited.
Since 2002, Prof. Hong has served as a faculty member in the department of Materials Science and Engineering at Yonsei University in Seoul, Korea. His primary interest is with novel magnetic materials and devices. His current research thrust is to realize new spintronic devices composed of nano-sized magnetic ultra-thin film systems, such as magnetic superlattices, magnetic tunnel junctions and ferromagnetic graphene. Spin detection and manipulation in ultra-thin magnetic/non-magnetic multilayers and spin transistors are another main thrust in his group. Ferromagnetic graphene and spin circuits on graphene have also been intensively exploring in his group.
Professor Hong has published more than 50 peer-reviewed research articles as the first or the corresponding author in prestigious journals including Nature Nanotechnology, Nature Communications, ACS Nano and ACS Applied Materials and Interfaces. He received the Prime Minister’s Commendation for the excellency of research funded by Korean Government. Information on Prof. Hong and his research field can be found at his website at spintronic.yonsei.ac.kr.
演讲题目:Intrinsic monolayer-graphene semiconductor gapped by hydrogenation and its field effect transistor
主题会场石墨烯战略前沿技术论坛
开始时间
结束时间
内容摘要

The absence of a sizeable band gap in graphene synthesized by present technologies and experimental challenges originating from the intrinsic nature and extrinsic degradation of graphene have been impeding further developments in envisioned carbon-based electronics. Here, we first demonstrate an intrinsic monolayer-graphene semiconductor hydrogenated by remote plasma and its field-effect transistor showing an on/off current ratio over 103 at room temperature. We show that a band gap can be tuned as wide as 3.8 eV by varying hydrogen coverage. Furthermore, the gap modulation is reversible owing to the non-destructive nature of our method of hydrogenation, which preserves the structural integrity of the original graphene. Our new band-gap engineering protocol for hydrogenated graphene will play a critical role in realizing a broad range of novel applications encompassing integrated carbon electronics, optoelectronics, and photonics.

关于主办方

联系我们
400-110-3655   

E-mail: meeting@c-gia.cn   meeting01@c-gia.cn

参展电话:13646399362(苏老师)

主讲申请:19991951101(王老师)

官方微信订阅号
Copyright © 中国国际石墨烯创新大会 版权所有     运营机构:北京现代华清材料科技发展中心
grapchina.org 京ICP备10026874号-12   grapchina.cn 京ICP备10026874号-23
京公网安备 11010802023402号
分享到: